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BAS116T_09 PDF预览

BAS116T_09

更新时间: 2024-09-27 08:48:15
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
3页 72K
描述
SURFACE MOUNT LOW LEAKAGE DIODE

BAS116T_09 数据手册

 浏览型号BAS116T_09的Datasheet PDF文件第2页浏览型号BAS116T_09的Datasheet PDF文件第3页 
BAS116T, BAW156T,  
BAV170T, BAV199T  
SURFACE MOUNT LOW LEAKAGE DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ultra-Small Surface Mount Package  
Very Low Leakage Current  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Notes 3 and 4)  
Case: SOT-523  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Polarity: See Diagrams Below  
Marking Information: See Diagrams Below and Page 3  
Ordering Information: See Page 2  
Weight: 0.002 grams (approximate)  
SOT-523  
Top View  
BAS116T Marking: 50  
BAW156T Marking: 53  
BAV170T Marking: 51  
BAV199T Marking: 52  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
85  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RMS Reverse Voltage  
60  
V
VR(RMS)  
Forward Continuous Current (Note 1)  
Single Diode  
Double Diode  
215  
125  
500  
mA  
mA  
IFM  
Repetitive Peak Forward Current  
IFRM  
4.0  
1.0  
0.5  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0μs  
@ t = 1.0ms  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
150  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
833  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-65 to +150  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 5)  
85  
V
V(BR)R  
IR = 100μA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.90  
1.0  
1.1  
Forward Voltage  
V
VF  
1.25  
5.0  
80  
nA  
nA  
VR = 75V  
Leakage Current (Note 5)  
Total Capacitance  
IR  
CT  
trr  
2
VR = 75V, Tj = 150°C  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
pF  
Reverse Recovery Time  
3.0  
μs  
Irr = 0.1 x IR, RL = 100Ω  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. Short duration pulse test used to minimize self-heating effect.  
BAS116T, BAW156T,  
1 of 3  
www.diodes.com  
March 2009  
© Diodes Incorporated  
BAV170T, BAV199T  
Document number: DS30258 Rev. 12 - 2  

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