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BAS116VY PDF预览

BAS116VY

更新时间: 2023-09-03 20:39:18
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安世 - NEXPERIA /
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8页 198K
描述
Low-leakage triple switching diodeProduction

BAS116VY 数据手册

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BAS116VY  
Low-leakage triple switching diode  
19 April 2023  
Product data sheet  
1. General description  
Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363  
Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Low leakage current: max. 5 nA  
Switching time: typical 0.8 µs  
Continuous reverse voltage: maximum 75 V  
Repetitive peak reverse voltage: maximum 85 V  
Repetitive peak forward current: maximum 500 mA  
3. Applications  
Low-leakage current applications in surface mounted circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Per diode  
VR  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse voltage  
reverse current  
Tj = 25 °C  
-
-
-
-
75  
5
V
IR  
VR = 75 V; pulsed; Tj = 25 °C  
nA  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
A1  
Description  
Simplified outline  
Graphic symbol  
anode (diode 1)  
anode (diode 2)  
anode (diode 3)  
cathode (diode 3)  
cathode (diode 2)  
cathode (diode 1)  
K1  
K2  
A2  
K3  
6
5
4
3
2
A2  
3
A3  
4
K3  
1
2
5
K2  
A1  
A3  
TSSOP6 (SOT363)  
006aab106  
6
K1  
 
 
 
 
 

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