生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.6 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | R-PDSO-F2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.2 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 最大功率耗散: | 0.2 W |
参考标准: | AEC-Q101 | 最大重复峰值反向电压: | 100 V |
最大反向恢复时间: | 3 µs | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAS116WS-AU_R2_000A1 | PANJIT |
获取价格 |
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE |
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BAS116WT-AH | SWST |
获取价格 |
小信号开关二极管 |
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BAS12 | NXP |
获取价格 |
Controlled avalanche rectifiers |
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BAS121 | PANJIT |
获取价格 |
SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
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BAS121A | PANJIT |
获取价格 |
SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
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BAS121C | PANJIT |
获取价格 |
SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
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BAS121S | PANJIT |
获取价格 |
SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
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BAS125 | TYSEMI |
获取价格 |
For low-loss, fast-recovery, meter protection,bias isolation and clamping applications |
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BAS125 | KEXIN |
获取价格 |
Silicon Schottky Diodes |
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BAS125 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and |
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