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BAS116W PDF预览

BAS116W

更新时间: 2024-06-27 12:14:05
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
4页 215K
描述
Reverse Voltage Vr : 90 V;Forward Current Io : 215 mA;Max Surge Current : 4.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 5 nA;Recovery Time : 3000 ns;Package / Case : SOD-123;Mounting Style : SMT/SMD

BAS116W 技术参数

生命周期:Contact Manufacturer包装说明:ROHS COMPLIANT PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.6Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.5 W
最大重复峰值反向电压:85 V最大反向恢复时间:0.003 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAS116W 数据手册

 浏览型号BAS116W的Datasheet PDF文件第2页浏览型号BAS116W的Datasheet PDF文件第3页浏览型号BAS116W的Datasheet PDF文件第4页 
BAS116W  
2550mW SOD-123 Low Leakage Switching Diode  
SOD-123  
Features  
Fast Switching Device (TRR <3.0uS)  
Power Dissipation of 200mW  
High Stability and High Reliability  
Low reverse leakage  
Mechanical Data  
SOD-123 Small Outline Plastic Package  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
MARKING: PA  
Maximum Ratings & Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.)  
Parameters  
Symbol  
VR  
Value  
90  
Unit  
V
Reverse Voltage  
Peak Reverse Voltage  
Power Dissipation  
VRM  
Pd  
Tj  
Ts  
RθJA  
IF  
130  
250  
-55-+150  
-55-+150  
625  
V
mW  
ć
Operating junction temperature  
Storage temperature range  
Thermal Resistance from Junction to Ambient  
Continuous Forward Current  
Non-repetitive Peak Forward Surge Current  
@tp=1us; TA=25ć  
ć
ć/W  
mA  
215  
IFSM  
4.0  
A
Note: FR-5 Board=1.0*0.75*0.062 in.  
Electrical Characteristics (Ratings at 25ć ambient temperature unless otherwise specified).  
Limits  
Typ  
Symbols  
V(BR)  
IR  
Parameter  
Test Condition  
Unit  
Min  
Max  
Reverse Voltage  
IR=100uA  
VR=75V  
130  
V
---  
---  
---  
---  
---  
---  
5
nA  
nA  
Reverse Leakage Current  
80  
VR=75 Tj=150ć  
IF=1.0mA  
0.90  
1.00  
1.10  
1.25  
IF=10mA  
VF  
Forward Voltage  
V
IF=50mA  
IF=150mA  
IF= IR=10mA  
RL=100Ω  
TRR  
CT  
Reverse Recovery Timeꢀ ꢀ  
---  
---  
3.0  
2.0  
uS  
pF  
Capacitance  
VR=0V, f=1MHZ  
2021-08/114  
REV:O  

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