是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.65 | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 2 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.2 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
最大功率耗散: | 0.25 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 250 V | 最大反向恢复时间: | 3 µs |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAS125 | TYSEMI |
获取价格 |
For low-loss, fast-recovery, meter protection,bias isolation and clamping applications | |
BAS125 | KEXIN |
获取价格 |
Silicon Schottky Diodes | |
BAS125 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and | |
BAS125-04 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and | |
BAS125-04 | KEXIN |
获取价格 |
Silicon Schottky Diodes | |
BAS125-04 | TYSEMI |
获取价格 |
For low-loss, fast-recovery, meter protection,bias isolation and clamping applications | |
BAS125-04E6327 | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 2 Element, Silicon, SMD, 3 PIN | |
BAS125-04E6433 | INFINEON |
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Rectifier Diode, Schottky, 2 Element, Silicon, SMD, 3 PIN | |
BAS125-04W | TYSEMI |
获取价格 |
For low-loss, fast-recovery, meter protection, bias isolation and clamping application | |
BAS125-04W | KEXIN |
获取价格 |
Silicon Schottky Diodes |