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BAS116T-7 PDF预览

BAS116T-7

更新时间: 2024-09-28 03:21:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管光电二极管
页数 文件大小 规格书
3页 57K
描述
SURFACE MOUNT LOW LEAKAGE DIODE

BAS116T-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.05
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.9 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:4 A
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:85 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS116T-7 数据手册

 浏览型号BAS116T-7的Datasheet PDF文件第2页浏览型号BAS116T-7的Datasheet PDF文件第3页 
BAS116T, BAW156T,  
BAV170T, BAV199T  
SURFACE MOUNT LOW LEAKAGE DIODE  
Features  
·
·
Ultra-Small Surface Mount Package  
Very Low Leakage Current  
SOT-523  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
Mechanical Data  
C
B
TOP VIEW  
·
Case: SOT-523, Molded Plastic  
·
Case material - UL Flammability Rating  
Classification 94V-0  
E
B
¾
¾
0.50  
G
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
H
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
J
M
N
·
·
·
·
Polarity: See Diagrams Below  
Marking: See Diagrams Below & Page 3  
Weight: 0.002 grams (approx.)  
K
L
L
D
M
N
a
Ordering Information: See Page 3  
0°  
8°  
¾
All Dimensions in mm  
BAV199T Marking: 52  
BAW156T Marking: 53  
BAV170T Marking: 51  
BAS116T Marking: 50  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
85  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
RMS Reverse Voltage  
60  
V
Forward Continuous Current (Note 1)  
Single Diode  
Double Diode  
215  
125  
IFM  
mA  
mA  
IFRM  
Repetitive Peak Forward Current  
500  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
Power Dissipation (Note 1)  
150  
833  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
DS30258 Rev. 5 - 2  
1 of 3  
BAS116T, BAW156T, BAV170T, BAV199T  

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