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BAS116-TP PDF预览

BAS116-TP

更新时间: 2024-02-27 23:06:30
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
2页 187K
描述
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-3

BAS116-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LEAD FREE, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.41配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:3 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS116-TP 数据手册

 浏览型号BAS116-TP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAS116  
Micro Commercial Components  
Features  
·
Power dissipation: 225mW (Tamb=25?)  
Forward current:200mA  
Epoxy meets UL 94 V-0 flammability rating  
225mW Switching  
Diode  
·
x
Moisture Sensitivity Level 1  
Marking: JV  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
·
SOT-23  
A
D
Maximum Ratings  
B
C
Operating Temperature: -55R to +150R  
Storage Temperature: -55R to +150R  
F
E
G
H
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
VR  
75V  
IR=100IA  
DIMENSIONS  
MM  
Maximum  
Instantaneous  
Forward Voltage  
0.9V  
1.0V  
1.1V  
IFM =1mA;  
VF  
I
I
I
FM =10mA;  
FM =50mA;  
FM =150mA;  
INCHES  
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
1.25V  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
5.0nA VR=75Volts  
F
G
H
J
.035  
.003  
.015  
.89  
.085  
.37  
Diode Capacitance  
CD  
Trr  
2pF  
Measured at 1.0MHz,  
VR=0V  
K
Suggested Solder  
Pad Layout  
Reverse Recovery  
Time  
3Is  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 2  
Revision: B  
2013/01/01  

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