Datasheet > BAS116TT1G

BAS116TT1G

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
3页	89K
描述
Switching Diode

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中文翻译

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BAS116TT1G 数据手册

BAS116TT1G

Switching Diode

Features

• Low Leakage Current Applications

• Medium Speed Switching Times

• Available in 8 mm Tape and Reel

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

CATHODE

ANODE

MAXIMUM RATINGS (T = 25°C)

MARKING

DIAGRAM

Rating

Symbol

Max

Unit

Continuous Reverse Voltage

Peak Forward Current

200

500

CASE 463

SOT−416

STYLE 2

AE MG

Peak Forward Surge Current

FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

= Specific Device Code

= Date Code

= Pb−Free Package

Total Device Dissipation,

FR−4 Board (Note 1)

225

T = 25°C

Derated above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

555

ORDERING INFORMATION

Junction−to−Ambient (Note 1)

†

Device

BAS116TT1G

Package

Shipping

3000 / Tape & Reel

Total Device Dissipation,

FR−4 Board (Note 2)

360

SOT−416

(Pb−Free)

T = 25°C

Derated above 25°C

2.9

mW/°C

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Thermal Resistance,

Junction−to−Ambient (Note 2)

345

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 × 1.0 Inch Pad

Semiconductor Components Industries, LLC, 2011

Publication Order Number:

September, 2011 − Rev. 1

BAS116TT1/D

12 3

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