Datasheet > BAS116LYL

BAS116LYL

更新时间： 2024-09-27 22:04:11

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描述
DIODE GEN PURP 75V 325MA 2DFN

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BAS116LYL 数据手册

BAS116L

Low-leakage diode

4 May 2016

Product data sheet

1. General description

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2

(SOD882) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Switching time typical: t_rr= 0.8 µs

•

Low leakage current typical: I_R= 3 pA

Repetitive peak reverse voltage: V_RRM≤ 85 V

Low capacitance typical: C_d= 2 pF

Leadless ultra small SMD plastic package

Low package height of 0.48 mm

AEC-Q101 qualified

3. Applications

•

Low-leakage current applications

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse T_j= 25 °C

voltage

I_F

forward current

reverse voltage

forward voltage

reverse current

T_amb= 25 °C

[1]

325

1.25

V_R

V_F

I_R

T_j= 25 °C

I_F= 150 mA; T_j= 25 °C

V_R= 75 V; T_j= 25 °C

0.003

0.8

µs

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...12

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