Datasheet > BAS101_09

BAS101_09

更新时间： 2024-11-12 06:41:27

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关高压
页数	文件大小	规格书
11页	119K
描述
High-voltage switching diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS101_09 数据手册

BAS101; BAS101S

High-voltage switching diodes

Rev. 02 — 14 December 2009

Product data sheet

1. Product profile

1.1 General description

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted

Device (SMD) plastic package.

Table 1.

Product overview

Type number

Package

NXP

Configuration

JEITA

BAS101

SOT23

single

BAS101S

dual series

1.2 Features

High switching speed: t_rr≤ 50 ns

Low leakage current

Low capacitance: C_d≤ 2 pF

Reverse voltage: V_R≤ 300 V

Small SMD plastic package

Repetitive peak reverse voltage:

V_RRM≤ 300 V

1.3 Applications

High-speed switching

High-voltage switching

Voltage clamping

Reverse polarity protection

1.4 Quick reference data

Table 2.

Quick reference data

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

200

150

300

I_R

V_R

t_rr

reverse current

V_R= 250 V

reverse voltage

reverse recovery time

[1]

[1] When switched from I_F= 30 mA to I_R= 30 mA; R_L= 100 Ω; measured at I_R= 3 mA.

12 3 4 5 6 7...11

中文翻译

下载PDF

与BAS101_09相关器件

型号	品牌	获取价格	描述	数据表
BAS101-Q	NEXPERIA	获取价格	High-voltage switching diodeProduction
BAS101S	NXP	获取价格	High-voltage switching diodes
BAS101S	NEXPERIA	获取价格	High-voltage switching diodesProduction
BAS101S,215	ETC	获取价格	DIODE ARRAY GP 300V 200MA SOT23
BAS101S-Q	NEXPERIA	获取价格	High-voltage switching dual diodeProduction
BAS11	NXP	获取价格	Controlled avalanche rectifiers
BAS11	NJSEMI	获取价格	Diode Switching 400V 0.35A 2-Pin GALF
BAS11/BAS12	ETC	获取价格	Controlled Avalanche Rectifiers
BAS116	DIODES	获取价格	Introducing Very Low Leakage SOT-23 Diodes:
BAS116	NEXPERIA	获取价格	Low-leakage diodeProduction