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BAS101S PDF预览

BAS101S

更新时间: 2024-02-21 22:25:12
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恩智浦 - NXP 二极管开关高压
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描述
High-voltage switching diodes

BAS101S 数据手册

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BAS101; BAS101S  
High-voltage switching diodes  
Rev. 01 — 8 September 2006  
Product data sheet  
1. Product profile  
1.1 General description  
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device  
(SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
Philips  
SOT23  
SOT23  
Configuration  
JEITA  
BAS101  
-
-
single  
BAS101S  
dual series  
1.2 Features  
I High switching speed: trr 50 ns  
I Low leakage current  
I Low capacitance: Cd 2 pF  
I Reverse voltage: VR 300 V  
I Small SMD plastic package  
I Repetitive peak reverse voltage:  
V
RRM 300 V  
1.3 Applications  
I High-speed switching  
I Voltage clamping  
I High-voltage switching  
I Reverse polarity protection  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IF  
forward current  
-
-
-
-
-
-
-
-
200  
150  
300  
50  
mA  
nA  
V
IR  
VR  
trr  
reverse current  
VR = 250 V  
reverse voltage  
reverse recovery time  
[1]  
ns  
[1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.  

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