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BAS116 PDF预览

BAS116

更新时间: 2024-01-25 23:00:17
品牌 Logo 应用领域
商升特 - SEMTECH 二极管开关光电二极管
页数 文件大小 规格书
2页 178K
描述
LOW LEAKAGE SWITCHING DIODE

BAS116 技术参数

生命周期:Contact Manufacturer包装说明:HALOGEN AND LEAD FREE PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.6配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.215 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W最大重复峰值反向电压:85 V
最大反向恢复时间:0.003 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAS116 数据手册

 浏览型号BAS116的Datasheet PDF文件第2页 
BAS116  
LOW LEAKAGE SWITCHING DIODE  
Features  
3
• Plastic SMD package  
• Low leakage current  
• High switching speed  
1
2
Marking Code: JV  
SOT-23 Plastic Package  
Application  
• Low leakage current applications in  
surface mounted circuits.  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Repetitive Peak Reverse Voltage  
Continuous Reverse Voltage  
Symbol  
VRRM  
VR  
Value  
85  
Unit  
V
75  
V
Continuous Forward Current  
IF  
215  
500  
mA  
mA  
Repetitive Peak Forward Current  
Non-Repetitive Peak Forward Surge Current  
IFRM  
t = 1 µs  
t = 1 ms  
t = 1 s  
4
1
0.5  
IFSM  
A
Power Dissipation  
Ptot  
Tj  
250  
mW  
O
C
Junction Temperature  
Storage Temperature Range  
150  
O
C
TS  
- 65 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Max.  
Unit  
Forward Voltage  
at IF = 1 mA  
at IF = 10 mA  
at IF = 50 mA  
at IF = 150 mA  
VF  
VF  
VF  
VF  
0.9  
1
1.1  
1.25  
V
V
V
V
Reverse Current  
at VR = 75 V  
at VR = 75 V, TJ = 150 C  
5
80  
nA  
IR  
O
Diode Capacitance  
at f = 1 MHz  
Cd  
trr  
2
3
pF  
µs  
Reverse Recovery Time  
at IF = IR = 10 mA, RL = 100 , irr = 0.1 IR  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 22/01/2008  

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