Datasheet > BAS116_15

BAS116_15

更新时间： 2022-02-26 13:55:52

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
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描述
225mW, SMD Switching Diode

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BAS116_15 数据手册

BAS116

Taiwan Semiconductor

Small Signal Product

225mW, SMD Switching Diode

FEATURES

- Low power loss, high current capability, low VF

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with

Nickel (Ni) under plate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-23

MECHANICAL DATA

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 8 mg (approximately)

- Marking Code: JV

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

225

Repetitive Peak Reverse Voltage

V_RRM

I_O

Mean Forward Current

200

Non-Repetitive Peak Forward Surge Current @ t = 1.0 s

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

I_FSM

500

R_θJA

330

°C/W

°C

T_J, T_STG

-55 to +150

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R= 100 μA

I_F= 1 mA

Reverse Breakdown Voltage

V_BR

0.9

1.0

1.1

1.25

I_F= 10 mA

I_F= 50 mA

I_F= 150 mA

V_F

Forward Voltage

T_J=25°C

T_J=150°C

V_R= 75 V

I_R

Reverse Leakage Current

V_R= 0 V , f = 1.0 MHz

(Note 2)

Junction Capacitance

C_J

t_rr

2.0

3.0

Reverse Recovery Time

Notes : 1. Valid provided that electrodes are kept at ambient temperature

2. Reverse recovery test conditions : I_F=10mA , I_R=10mA , R_L=100 Ω, I_RR= 1mA

Document Number: DS_S1412037

Version: D15

12 3 4

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