Datasheet > BAS116_08

BAS116_08

更新时间： 2022-10-14 21:36:54

品牌	Logo	应用领域
美台 - DIODES		二极管
页数	文件大小	规格书
3页	109K
描述
SURFACE MOUNT LOW LEAKAGE DIODE

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BAS116_08 数据手册

BAS116

SURFACE MOUNT LOW LEAKAGE DIODE

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Features

Mechanical Data

•

Surface Mount Package Ideally Suited for Automated Insertion

Very Low Leakage Current

Lead Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: Solderable per MIL-STD-202, Method

208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

SOT-23

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Repetitive Peak Forward Current

215

500

V_R(RMS)

I_FM

I_FRM

4.0

1.0

0.5

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0ms

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Symbol

Value

250

Unit

P_D

Power Dissipation (Note 1) @T = 25°C

500

°C/W

°C

Thermal Resistance Junction to Ambient Air (Note 1) @T = 25°C

Operating and Storage Temperature Range

R_θ

-65 to +150

T_J, T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

V_(BR)R

⎯

I_R= 100μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

V_R= 75V

0.90

1.0

1.1

Forward Voltage

V_F

⎯

1.25

5.0

Leakage Current (Note 2)

Total Capacitance

I_R

C_T

t_rr

⎯

V_R= 75V, T_j= 150°C

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

3.0

⎯

μs

Notes:

1. Part mounted on FR-4 PC board with pad layout as shown on page 3.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 3

www.diodes.com

May 2008

BAS116

Document number: DS30233 Rev. 9 - 2

12 3

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与BAS116_08相关器件

型号	品牌	获取价格	描述	数据表
BAS116_1	DIODES	获取价格	SURFACE MOUNT LOW LEAKAGE DIODE
BAS116_11	DIODES	获取价格	SURFACE MOUNT LOW LEAKAGE DIODE
BAS116_13	MCC	获取价格	225mW Switching Diode
BAS116_15	PANJIT	获取价格	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAS116_15	TSC	获取价格	225mW, SMD Switching Diode
BAS116_R1_00001	PANJIT	获取价格	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAS116_R2_00001	PANJIT	获取价格	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAS116-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAS116-13-F	DIODES	获取价格	SURFACE MOUNT LOW LEAKAGE DIODE
BAS116-7-F	DIODES	获取价格	SURFACE MOUNT LOW LEAKAGE DIODE

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