Datasheet > BAS116

BAS116

更新时间： 2024-03-03 10:10:55

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	261K
描述
SOT-23

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BAS116 数据手册

RoHS

COMPLIANT

BAS116

Small-Signal Fast Switching Diodes

Features

● VR 100V

●

I_FAV 200mA

Typical Applications

●Low-Leakage

Mechanical Data

●

ackage: SOT23

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Marking:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

Conditions

VALUE

PARAMETER

SYMBOL

V_RRM

V_R

UNIT

Repetitive peak reverse voltage

Reverse voltage

100

IR=100uA

Peak forward surge current

Average forward current

Power dissipation

IFSM

I_FAV

Non-Repetitive t = 1 μs

℃

200

P_tot

225

T_j

Maximum junction temperature

Storage temperature range

150

T_stg

℃

-55 to +150

Electrical Characteristics（T =25℃Unless otherwise specified）

■

PARAMETER

Symbol

UNIT

Conditions

Min

Max

Breakdown Voltage

V_R

IR=100uA

100

IF=1mA

0.9

1.0

1.1

1.25

IF=10mA

Forward Voltage

V_F

IF=50mA

IF=150mA

VR=75V

Reverse Leakage Current

Capacitance

I_R

VR=0V,f=1MHz

IF=IR=10mA，Irr=0.1*IR,

RL=100Ω

Reverse Recovery Time

Trr

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S2016

Rev.1.1,24-Jan-19

www.21yangjie.com

12 3 4

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