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BAS101S-Q PDF预览

BAS101S-Q

更新时间: 2024-11-13 17:15:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 198K
描述
High-voltage switching dual diodeProduction

BAS101S-Q 数据手册

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BAS101S-Q  
High-voltage switching dual diode  
5 April 2024  
Product data sheet  
1. General description  
High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD)  
plastic package.  
2. Features and benefits  
High switching speed: trr ≤ 50 ns  
Low leakage current  
Repetitive peak reverse voltage: VRRM ≤ 300  
Low capacitance: Cd ≤ 2 pF  
Reverse voltage: VR ≤ 300 V  
Small SMD plastic package  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
High-speed switching  
High-voltage switching  
Voltage clamping  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IF  
forward current  
reverse current  
reverse voltage  
-
-
-
-
-
-
-
-
200  
150  
300  
50  
mA  
nA  
V
IR  
VR  
trr  
VR = 250 V; Tamb = 25 °C  
reverse recovery time When switched from IF = 30 mA to IR =  
30 mA; RL = 100 Ω; measured at IR = 3  
mA; Tamb = 25 °C  
ns  
 
 
 
 

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