Datasheet > BAS101S-Q

BAS101S-Q

更新时间： 2024-05-23 22:23:30

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	198K
描述
High-voltage switching dual diodeProduction

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BAS101S-Q 数据手册

BAS101S-Q

High-voltage switching dual diode

5 April 2024

Product data sheet

1. General description

High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current

Repetitive peak reverse voltage: V_RRM≤ 300

Low capacitance: C_d≤ 2 pF

Reverse voltage: V_R≤ 300 V

Small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

High-voltage switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

reverse current

reverse voltage

200

150

300

I_R

V_R

t_rr

V_R= 250 V; T_amb= 25 °C

reverse recovery time When switched from I_F= 30 mA to I_R=

30 mA; R_L= 100 Ω; measured at I_R= 3

mA; T_amb= 25 °C

12 3 4 5 6 7...10

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