Datasheet > BAP64-05

BAP64-05

更新时间： 2024-11-21 08:48:11

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管
页数	文件大小	规格书
2页	739K
描述
PIN DIODE

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中文翻译

获取价格

数据手册

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BAP64-05 数据手册

BAP64-05

PIN DIODE

FEATURES

SOT-23

High voltage, current controlled

RF resistor for RF attenuators and switches

Low diode capacitance

Low diode forward resistance

Low series inductance

For applications up to 3 GHz

RF attenuators and switches

Marking: 5K

Maximum Ratings @T_A=25℃

Parameter

Symbol

Unit

Limits

Continuous reverse voltage

Continuous Forward Current

Power Dissipation

V_R

I_F

175

100

℃/W

℃

P_D

2 50

Thermal Resistance Junction to Ambient

Junction temperature

R_θJA

T_j

500

150

Storage temperature

T_STG

-65~+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

V_R=175V

conditions

MIN

TYP

MAX

UNIT

Reverse voltage leakage current

Forward voltage

I_R

µA

V_R=20V

V_F

I_F=50mA

1.1

V_R=0, f=1MHz

0.52

0.37

0.23

Diode capacitance

C_d

V_R=1V, f=1MHz

V_R=20V, f=1MHz

0.35

I_F=0.5mA, f=100MHz;note1

I_F=1mA, f=100MHz ;note1

I_F=10mA, f=100MHz;note1

I_F=100mA, f=100MHz;note1

Ω

Diode forward resistance

r_D

3.8

1.35

0.7

when switched from

Charge carrier life time

Series inductance

I_F= 10 mA to I_R= 6 mA; R_L=

100 Ω; measured at I_R=3mA

1.55

1.4

μS

τ_L

L_S

IF=100mA, f=100MHz

Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.

JinYu

semiconductor

www.htsemi.com

中文翻译

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