5秒后页面跳转
BAP64-05 PDF预览

BAP64-05

更新时间: 2024-11-21 08:48:11
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 459K
描述
General Purpose Pin Diodes 250mW

BAP64-05 数据手册

 浏览型号BAP64-05的Datasheet PDF文件第2页浏览型号BAP64-05的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAP64-05  
Micro Commercial Components  
Features  
General  
Purpose Pin Diodes  
250mW  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
·
Low diode capacitance  
Low diode forward resistance  
MARKING: 5K  
SOT-23  
A
Maximum Ratings @ 25°C Unless Otherwise Specified  
D
Parameter  
Continuous Reverse Voltage  
Forward Current  
Symbol  
VR  
Limits  
Unit  
V
B
C
175  
100  
250  
IF  
mA  
mW  
F
E
Power Dissipation(TA=90oC)  
PD  
Junction and Storage temperature  
TjPstg  
-65~+150  
H
G
J
Thermal Resistance Junction to  
Ambient  
oC/W  
RthJA  
500  
DIMENSIONS  
MM  
INCHES  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Parameter  
Symbol Min. TYP Max. Unit  
Conditions  
Reverse Voltage  
Leakage  
IR  
10  
VR=175V  
uA  
F
1.0  
1.1  
VR=20V  
Current  
G
H
J
.100  
1.12  
.180  
.51  
Forward voltage  
VF  
V
IF=50mA  
.085  
.37  
K
Suggested Solder  
Pad Layout  
Cd1  
Cd2  
Cd3  
rD  
0.52  
0.37  
pF VR=0V,f=1MHz  
Diode capacitance  
pF  
VR=1V,f=1MHz  
.031  
.800  
0.23 0.35  
pF VR=20V,f=1MHz  
.035  
.900  
20  
40  
IF=0.5mA, f=100MHz  
Diode forward  
.079  
2.000  
inches  
mm  
rD  
rD  
10  
2
20  
IF=1mA , f=100MHz  
IF=10mA , f=100MHz  
resistance  
3.8  
rD  
0.7  
1.35  
IF=100mA , f=100MHz  
.037  
.950  
when switched from  
IF=10 mAto IR= 6 mA; RL=  
100Ω;measured at IR=3mA  
IF=100mA, f=100MHz  
Charge carrier  
life time  
.037  
.950  
1.55  
1.4  
μS  
τL  
Series inductance  
LS  
nH  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

与BAP64-05相关器件

型号 品牌 获取价格 描述 数据表
BAP64-05_15 JMNIC

获取价格

Silicon PIN diode
BAP64-05_2015 JMNIC

获取价格

Silicon PIN diode
BAP64-05-HF KEXIN

获取价格

PIN Diodes
BAP64-05TRL NXP

获取价格

DIODE SILICON, PIN DIODE, PIN Diode
BAP64-05TRL13 NXP

获取价格

DIODE SILICON, PIN DIODE, PIN Diode
BAP64-05W MCC

获取价格

General Purpose Pin Diodes 200mW
BAP64-05W HTSEMI

获取价格

PIN DIODES
BAP64-05W NXP

获取价格

Silicon PIN diode
BAP64-05W SECOS

获取价格

Small Signal General Purpose Pin Diode
BAP64-05W CJ

获取价格

SOT-323