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AT28BV64 PDF预览

AT28BV64

更新时间: 2024-11-27 22:39:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池可编程只读存储器
页数 文件大小 规格书
8页 414K
描述
64K 8K x 8 Battery-Voltage CMOS E2PROM

AT28BV64 数据手册

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AT28BV64  
Features  
2.7V to 3.6V Supply  
Full Read and Write Operation  
Low Power Dissipation  
8 mA Active Current  
50 µA CMOS Standby Current  
Read Access Time - 300 ns  
Byte Write - 3 ms  
Direct Microprocessor Control  
DATA Polling  
64K (8K x 8)  
Battery-Voltage  
CMOS  
READY/BUSY Open Drain Output  
High Reliability CMOS Technology  
Endurance: 100,000 Cycles  
Data Retention: 10 Years  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
E2PROM  
Description  
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable  
Read Only Memory specifically designed for battery powered applications. Its 64K of  
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced  
nonvolatile CMOS technology, the device offers access times to 200 ns with power  
dissipation less than 30 mW. When the device is deselected the standby current is  
less than 50 µA.  
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the  
need for external components. During a byte write, the address and data are latched  
internally, freeing the microprocessor address and data bus for other operations. Fol-  
(continued)  
Pin Configurations  
PDIP, SOIC Top View  
Pin Name  
A0 - A12  
CE  
Function  
Addresses  
Chip Enable  
AT28BV64  
OE  
Output Enable  
Write Enable  
Data Inputs/Outputs  
Ready/Busy Output  
No Connect  
WE  
I/O0 - I/O7  
RDY/BUSY  
NC  
DC  
Don’t Connect  
PLCC Top View  
TSOP Top View  
0493A  
2-127  

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