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AT28BV64B-20SU PDF预览

AT28BV64B-20SU

更新时间: 2024-11-28 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 353K
描述
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

AT28BV64B-20SU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP28,.4针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:1 week
风险等级:8.43最长访问时间:200 ns
其他特性:100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:17.9 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:2.65 mm
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES宽度:7.5 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

AT28BV64B-20SU 数据手册

 浏览型号AT28BV64B-20SU的Datasheet PDF文件第2页浏览型号AT28BV64B-20SU的Datasheet PDF文件第3页浏览型号AT28BV64B-20SU的Datasheet PDF文件第4页浏览型号AT28BV64B-20SU的Datasheet PDF文件第5页浏览型号AT28BV64B-20SU的Datasheet PDF文件第6页浏览型号AT28BV64B-20SU的Datasheet PDF文件第7页 
Features  
Single 2.7V to 3.6V Supply  
Hardware and Software Data Protection  
Low Power Dissipation  
– 15 mA Active Current  
– 20 µA CMOS Standby Current  
Fast Read Access Time – 200 ns  
Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
64K (8K x 8)  
Battery-Voltage  
Parallel  
Fast Write Cycle Times  
– Page Write Cycle Time: 10 ms Maximum  
– 1 to 64 Byte Page Write Operation  
DATA Polling for End of Write Detection  
High-reliability CMOS Technology  
– Endurance: 100,000 Cycles  
EEPROM  
– Data Retention: 10 Years  
with Page Write  
and Software  
Data Protection  
JEDEC Approved Byte-wide Pinout  
Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT28BV64B is a high-performance electrically erasable programmable read only-  
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 200 ns with power dissipation of just 54 mW. When the device is  
deselected, the CMOS standby current is less than 20 µA.  
AT28BV64B  
The AT28BV64B is accessed like a static RAM for the read or write cycle without the  
need for external components. The device contains a 64 byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to  
64 bytes of data are internally latched, freeing the address and data bus for other  
operations. Following the initiation of a write cycle, the device will automatically write  
the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a  
new access for a read or write can begin.  
Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-  
bility. A software data protection mechanism guards against inadvertent writes. The  
device also includes an extra 64 bytes of EEPROM for device identification or  
tracking.  
0299H–PEEPR–10/06  

AT28BV64B-20SU 替代型号

型号 品牌 替代类型 描述 数据表
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