Datasheet > AT28BV64B_09

AT28BV64B_09

更新时间： 2024-11-28 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	446K
描述
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

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AT28BV64B_09 数据手册

Features

• Single 2.7V to 3.6V Supply

• Hardware and Software Data Protection

• Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

64K (8K x 8)

Battery-Voltage

Parallel

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

• DATA Polling for End of Write Detection

• High-reliability CMOS Technology

– Endurance: 100,000 Cycles

EEPROM

– Data Retention: 10 Years

with Page Write

and Software

Data Protection

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Only

1. Description

The AT28BV64B is a high-performance electrically erasable programmable read only-

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

AT28BV64B

The AT28BV64B is accessed like a static RAM for the read or write cycle without the

need for external components. The device contains a 64 byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-

bility. A software data protection mechanism guards against inadvertent writes. The

device also includes an extra 64 bytes of EEPROM for device identification or

tracking.

0299I–PEEPR–4/09

12 3 4 5 6 7...16

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与AT28BV64B_09相关器件

型号	品牌	获取价格	描述	数据表
AT28BV64B-20JC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JU	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20PC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PL	ATMEL	获取价格	EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28BV64B-20SC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20SI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20SU	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20SU-T	MICROCHIP	获取价格	IC EEPROM 64KBIT 200NS 28SOIC

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