Datasheet > 存储 > EEPROM> AT28BV64B-20TU

AT28BV64B-20TU

更新时间： 2024-11-28 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	353K
描述
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

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中文翻译

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数据手册
替代型号

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AT28BV64B-20TU 数据手册

Features

•

Single 2.7V to 3.6V Supply

Hardware and Software Data Protection

Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

Fast Read Access Time – 200 ns

Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

•

64K (8K x 8)

Battery-Voltage

Parallel

•

Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

DATA Polling for End of Write Detection

High-reliability CMOS Technology

– Endurance: 100,000 Cycles

•

EEPROM

– Data Retention: 10 Years

with Page Write

and Software

Data Protection

•

JEDEC Approved Byte-wide Pinout

Industrial Temperature Ranges

Green (Pb/Halide-free) Packaging Option

1. Description

The AT28BV64B is a high-performance electrically erasable programmable read only-

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

AT28BV64B

The AT28BV64B is accessed like a static RAM for the read or write cycle without the

need for external components. The device contains a 64 byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-

bility. A software data protection mechanism guards against inadvertent writes. The

device also includes an extra 64 bytes of EEPROM for device identification or

tracking.

0299H–PEEPR–10/06

12 3 4 5 6 7...17

中文翻译

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AT28BV64B-20TU 替代型号

型号	品牌	替代类型	描述	数据表
AT28BV64B-20TC	ATMEL	类似代替	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20TI	ATMEL	功能相似	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM

与AT28BV64B-20TU相关器件

型号	品牌	获取价格	描述	数据表
AT28BV64B-25JC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25JI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25PC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25PI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25SC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25SI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25TC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-25TI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-DWF	ATMEL	获取价格	EEPROM, 250ns, Parallel, CMOS,
AT28BV64B-W	ATMEL	获取价格	EEPROM, 250ns, Parallel, CMOS,

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