Datasheet > AT28C010_06

AT28C010_06

更新时间： 2024-11-24 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	395K
描述
1-megabit (128K x 8) Paged Parallel EEPROM

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数据手册

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AT28C010_06 数据手册

Features

•

Fast Read Access Time – 120 ns

Automatic Page Write Operation

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

•

Fast Write Cycle Time

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-byte Page Write Operation

Low Power Dissipation

1-megabit

(128K x 8)

Paged Parallel

EEPROM

– 40 mA Active Current

– 200 µA CMOS Standby Current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

•

Single 5V 10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-wide Pinout

Industrial Temperature Ranges

Green (Pb/Halide-free) Packaging Option

AT28C010

1. Description

The AT28C010 is a high-performance electrically-erasable and programmable read-

only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-

ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 200 µA.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 128-byte page register to allow

writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to

128 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28C010 has additional features to ensure high quality and manufacturabil-

ity. The device utilizes internal error correction for extended endurance and improved

data retention characteristics. An optional software data protection mechanism is

available to guard against inadvertent writes. The device also includes an extra

128 bytes of EEPROM for device identification or tracking.

0353G–PEEPR–10/06

12 3 4 5 6 7...17

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