Features
• Single 2.7V to 3.6V Supply
• Hardware and Software Data Protection
• Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Fast Read Access Time - 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
• Fast Write Cycle Times
64K (8K x 8)
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
• DATA Polling for End of Write Detection
• High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Battery-Voltage™
Parallel EEPROM
with Page Write
and Software
Description
Data Protection
The AT28BV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
AT28BV64B
(continued)
Pin Configurations
PDIP, SOIC
Top View
Pin Name
A0 - A12
CE
Function
Addresses
NC
A12
A7
1
2
3
4
5
6
7
8
9
28 VCC
27 WE
26 NC
25 A8
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
A6
OE
A5
24 A9
A4
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
A3
WE
A2
A1
I/O0 - I/O7
NC
3-Volt, 64K
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
E2PROM with
Data Protection
DC
Don’t Connect
PLCC
Top View
TSOP
Top View
A6
A5
A4
A3
A2
5
6
7
8
9
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
OE
A11
A9
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
2
3
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A8
4
NC
WE
VCC
NC
A12
A7
5
A1 10
A0 11
6
7
NC 12
I/O0 13
8
9
10
11
12
13
14
A6
A5
A4
A1
Rev. 0299F–05/28/99
A3
A2
Note:
PLCC package pins 1 and 17
are DON’T CONNECT.
1