Datasheet > AT28BV64B_06

AT28BV64B_06

更新时间： 2024-11-28 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	353K
描述
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT28BV64B_06 数据手册

Features

•

Single 2.7V to 3.6V Supply

Hardware and Software Data Protection

Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

Fast Read Access Time – 200 ns

Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

•

64K (8K x 8)

Battery-Voltage

Parallel

•

Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

DATA Polling for End of Write Detection

High-reliability CMOS Technology

– Endurance: 100,000 Cycles

•

EEPROM

– Data Retention: 10 Years

with Page Write

and Software

Data Protection

•

JEDEC Approved Byte-wide Pinout

Industrial Temperature Ranges

Green (Pb/Halide-free) Packaging Option

1. Description

The AT28BV64B is a high-performance electrically erasable programmable read only-

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

AT28BV64B

The AT28BV64B is accessed like a static RAM for the read or write cycle without the

need for external components. The device contains a 64 byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-

bility. A software data protection mechanism guards against inadvertent writes. The

device also includes an extra 64 bytes of EEPROM for device identification or

tracking.

0299H–PEEPR–10/06

12 3 4 5 6 7...17

中文翻译

下载PDF

与AT28BV64B_06相关器件

型号	品牌	获取价格	描述	数据表
AT28BV64B_09	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20JC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JU	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20PC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PL	ATMEL	获取价格	EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28BV64B-20SC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20SI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20SU	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

与AT28BV64B_06相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28BV64B_06

AT28BV64B_06 数据手册

与AT28BV64B_06相关器件

与AT28BV64B_06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28BV64B_06

AT28BV64B_06 数据手册

与AT28BV64B_06相关器件

与AT28BV64B_06相关文章

您还可以找

您在本页遇到什么问题？