Datasheet > AT28BV64B

AT28BV64B

更新时间： 2024-11-27 22:53:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	247K
描述
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection

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中文翻译

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数据手册

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AT28BV64B 数据手册

Features

• Single 2.7V to 3.6V Supply

• Hardware and Software Data Protection

• Low Power Dissipation

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Fast Read Access Time - 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

64K (8K x 8)

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

• DATA Polling for End of Write Detection

• High-reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

Battery-Voltage^™

Parallel EEPROM

with Page Write

and Software

Description

Data Protection

The AT28BV64B is a high-performance electrically erasable programmable read only

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 200 ns with power dissipation of just 54 mW. When the device is

deselected, the CMOS standby current is less than 20 µA.

AT28BV64B

(continued)

Pin Configurations

PDIP, SOIC

Top View

Pin Name

A0 - A12

Function

Addresses

A12

28 VCC

27 WE

26 NC

25 A8

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

24 A9

23 A11

22 OE

21 A10

20 CE

19 I/O7

18 I/O6

17 I/O5

16 I/O4

15 I/O3

I/O0 - I/O7

3-Volt, 64K

A0 10

I/O0 11

I/O1 12

I/O2 13

GND 14

E²PROM with

Data Protection

Don’t Connect

PLCC

Top View

TSOP

Top View

29 A8

28 A9

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

VCC

A12

A1 10

A0 11

NC 12

I/O0 13

Rev. 0299F–05/28/99

Note:

PLCC package pins 1 and 17

are DON’T CONNECT.

12 3 4 5 6 7...12

中文翻译

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与AT28BV64B相关器件

型号	品牌	获取价格	描述	数据表
AT28BV64B_06	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B_09	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20JC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20JU	ATMEL	获取价格	64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20PC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20PL	ATMEL	获取价格	EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28BV64B-20SC	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM
AT28BV64B-20SI	ATMEL	获取价格	64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM

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