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AT28BV256-25SI PDF预览

AT28BV256-25SI

更新时间: 2024-11-28 20:23:31
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 219K
描述
EEPROM, 32KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, MS-013, SOIC-28

AT28BV256-25SI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP28,.4针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.81
Is Samacsys:N最长访问时间:250 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:17.9 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:2功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:2.65 mm最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
宽度:7.5 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28BV256-25SI 数据手册

 浏览型号AT28BV256-25SI的Datasheet PDF文件第2页浏览型号AT28BV256-25SI的Datasheet PDF文件第3页浏览型号AT28BV256-25SI的Datasheet PDF文件第4页浏览型号AT28BV256-25SI的Datasheet PDF文件第5页浏览型号AT28BV256-25SI的Datasheet PDF文件第6页浏览型号AT28BV256-25SI的Datasheet PDF文件第7页 
Features  
Single 2.7V - 3.6V Supply  
Fast Read Access Time – 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64 Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1- to 64-byte Page Write Operation  
Low Power Dissipation  
15 mA Active Current  
256K (32K x 8)  
Battery-Voltage™  
Parallel  
20 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
JEDEC Approved Byte-wide Pinout  
Commercial and Industrial Temperature Ranges  
EEPROMs  
Description  
AT28BV256  
The AT28BV256 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmels advanced nonvolatile CMOS technology, the device offers access  
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,  
the CMOS standby current is less than 200 µA.  
(continued)  
Pin Configurations  
PDIP, SOIC  
Top View  
Pin Name  
A0 - A14  
CE  
Function  
Addresses  
A14  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
2
WE  
A13  
A8  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
3
A6  
4
OE  
A5  
5
A9  
A4  
6
A11  
OE  
WE  
A3  
7
A2  
8
A10  
CE  
I/O0 - I/O7  
NC  
A1  
9
A0  
10  
11  
12  
13  
14  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
I/O0  
I/O1  
I/O2  
GND  
DC  
Dont Connect  
PLCC  
Top View  
TSOP  
Top View  
OE  
A11  
A9  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A10  
CE  
A6  
A5  
A4  
A3  
A2  
5
6
7
8
9
29 A8  
28 A9  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
2
3
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A8  
4
A13  
WE  
VCC  
A14  
A12  
A7  
5
6
A1 10  
A0 11  
7
8
NC 12  
I/O0 13  
9
10  
11  
12  
13  
14  
A6  
A5  
A4  
A1  
Rev. 0273G11/99  
A3  
A2  
Note: PLCC package pins 1 and 17  
are DONT CONNECT.  

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