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AS6VA25616-55TC PDF预览

AS6VA25616-55TC

更新时间: 2024-10-28 19:51:51
品牌 Logo 应用领域
ALSC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 140K
描述
Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

AS6VA25616-55TC 数据手册

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AS6VA25616  
®
Data retention characteristics (over the operating range)13,5  
Parameter  
Symbol  
Test conditions  
Min  
1.5V  
Max  
-
Unit  
V
VCC for data retention  
VDR  
VCC = 1.5V  
CS VCC – 0.1V or  
UB = LB = > VCC – 0.1V  
VIN VCC – 0.1V or  
VIN 0.1V  
Data retention current  
ICCDR  
tCDR  
tR  
10  
µA  
ns  
Chip deselect to data retention time  
Operation recovery time  
0
tRC  
ns  
Data retention waveform  
Data retention mode  
V
V
V
CC  
V
1.5V  
CC  
CC  
DR  
t
t
R
CDR  
V
DR  
V
V
IH  
CS  
IH  
AC test loads and waveforms  
Thevenin equivalent:  
R1  
R1  
V
R
CC  
V
TH  
CC  
V
OUTPUT  
OUTPUT  
TH  
OUTPUT  
30 pF  
5 pF  
ALL INPUT PULSES  
V
Typ  
R2  
CC  
R2  
90%  
10%  
90%  
10%  
INCLUDING  
JIG AND  
INCLUDING  
JIG AND  
SCOPE  
< 5 ns  
(c)  
GND  
(a)  
SCOPE  
(b)  
Parameters  
R1  
VCC = 2.7V  
1095  
Unit  
Ohms  
Ohms  
Ohms  
Volts  
R2  
1600  
RTH  
555  
VTH  
1.6V  
Notes  
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CS is required to meet I specification.  
CC  
CC  
SB  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions.  
t
and t  
are specified with C = 5pF as in Figure C. Transition is measured 500 mV from steady-state voltage.  
CHZ L  
CLZ  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CS and OE are LOW for read cycle.  
Address valid prior to or coincident with CS transition LOW.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 N/A.  
13 1.5V data retention applies to commercial and industrial temperature range operations.  
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
5/25/01; v.1.2  
Alliance Semiconductor  
P. 6 of 9  

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