Datasheet > AS6UB51216-55TI

AS6UB51216-55TI

更新时间： 2024-10-29 03:05:47

品牌	Logo	应用领域
ALSC		静态存储器光电二极管
页数	文件大小	规格书
11页	184K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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中文翻译

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数据手册

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AS6UB51216-55TI 数据手册

AS6UB51216

ꢂꢃꢆ

Read cycle (over the operating range)

–55

–70

Parameter

Symbol

t_RC

Min

–

Max

–

Min

–

Max

–

Unit

Notes

Read cycle time

Address access time

t_AA

–

Chip enable (CS) access time

Output enable (OE) access time

Output hold from address change

CSꢁꢇꢍꢝꢁꢚo output in low Z

CS high to output in high Z

OE low to output in low Z

UB/LB access time

t_ACS

t_OE

–

t_OH

t_CLZ

t_CHZ

t_OLZ

t_BA

–

4, 5

–

UB/LB low to low Z

t_BLZ

t_BHZ

t_OHZ

t_PU

4, 5

UB/LB high to high Z

OE high to output in high Z

Power up time

–

Power down time

t_PD

–

Key to switching waveforms

Rising input

Falling input

Undefined/don’t care

ꢂꢃꢄꢃꢅꢃꢆ

Read waveform 1 (address controlled)

Address

Previous data valid

Data valid

OUT

10/30/01; V.0.9.2

Alliance Semiconductor

P. 4 of 11

1 2 345 6 7...11

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与AS6UB51216-55TI相关器件

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AS6UB51216-70BC	ALSC	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, CSP, FBGA-48
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