Datasheet > AS6UB51216-55TI

AS6UB51216-55TI

更新时间： 2024-01-02 21:37:49

品牌	Logo	应用领域
ALSC		静态存储器光电二极管
页数	文件大小	规格书
11页	184K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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中文翻译

获取价格

数据手册

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AS6UB51216-55TI 数据手册

AS6UB51216

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Supply

CS2

Current I/O1–I/O8 I/O9–I/O16

Mode

I_SB

High Z

Standby (I_SB)

I_CC

High Z

D_OUT

High Z

D_OUT

D_IN

High Z

D_OUT

High Z

D_IN

Output disable (I_CC)

I_CC

Read (I_CC)

Write (I_CC)

I_CC

High Z

D_IN

Key: X = Don’t care, L = Low, H = High.

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Parameter

Vcc

Description

Test Conditions

Min

Max

Unit

Supply voltage

2.7

2.4

3.3

V_OH

V_OL

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input Load Current

Output Load Current

I_OH= –1.0mA

I_OL= 2.1mA

0.4

V_CC+ 0.2

0.6

V_IH

2.2

–0.2

–1

V_IL

I_IX

GND < V_IN< V_CC

µA

I_OZ

GND < V_O< V_CC;Outputs High Z

–1

I_OUT= 0mA,

f = 0

I_CC

V_CCOperating Supply Current

Average V_CCOperating Supply

Current at 1 MHz

I_OUT= 0mA,

f =1MHz

_CC1@ 1 MHz

30 mA at 55ns

40 mA at 70ns

Average V_CCOperating Supply

Current

I_CC2

_OUT= 0mA, f = f_Max

CS1 > V_CC– 0.2V or CS2< 0.2V or UB

= LB

> V_IH, other inputs = V_ILor V_IH, f = 0

CS Power Down Current; TTL

Inputs

I_SB

300

µA

CS1 > V_CC– 0.2V or CS2< 0.2V

UB = LB > V_CC– 0.2V

other inputs = 0V – V_CC, f = f_Max

CS Power Down Current; CMOS

Inputs

I_SB1

µA

ꢀꢁ

Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)

Signals

Parameter

Input capacitance

Symbol

C_IN

Test conditions

V_IN= 0V

Max

Unit

A, CS, WE, OE, LB, UB

I/O

I/O capacitance

C_I/O

V_IN= V_OUT= 0V

10/30/01; V.0.9.2

Alliance Semiconductor

P. 3 of 11

1 234 5 6 7...11

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