Datasheet > APTC60AM45T1G-Module

APTC60AM45T1G-Module

更新时间： 2024-11-25 14:53:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	503K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTC60AM45T1G

Phase leg

Super Junction MOSFET

Power Module

V_DSS= 600V

R_DSon= 45m max @ Tj = 25°C

I_D= 49A @ Tc = 25°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



NTC

Ultra low R_DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged



Very low stray inductance

Symmetrical design



Internal thermistor for temperature monitoring

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

RoHS Compliant

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

600

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

130

±20

m

P_D

Maximum Power Dissipation

T_c= 25°C

250

I_AR

E_AR

E_AS

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1900

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 7

www.microsemi.com

12 3 4 5 6 7

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