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APTC60DDAM35T3G-Module PDF预览

APTC60DDAM35T3G-Module

更新时间： 2024-11-28 14:54:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 337K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTC60DDAM35T3G-Module 数据手册

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APTC60DDAM35T3G  
VDSS = 600V  
Dual boost chopper  
Super Junction MOSFET  
Power Module  
R
DSon = 35mmax @ Tj = 25°C  
ID = 72A @ Tc = 25°C  
13 14  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
CR1  
Q1  
CR2  
22  
23  
7
8
Features  
Super junction MOSFET  
Q2  
-
-
-
-
-
Ultra low RDSon  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
26  
27  
4
3
Kelvin source for easy drive  
Very low stray inductance  
Internal thermistor for temperature monitoring  
29  
15  
30  
31  
R1  
32  
16  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
Each leg can be easily paralleled to achieve a single  
boost of twice the current capability  
RoHS Compliant  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
All ratings @ Tj = 25°C unless otherwise specified  
Absolute maximum ratings (per super junction MOSFET)  
Symbol  
Parameter  
Drain - Source Voltage  
Max ratings  
Unit  
V
VDSS  
600  
72  
54  
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
288  
±20  
35  
V
m  
W
PD  
IAR  
EAR  
EAS  
Power Dissipation  
Tc = 25°C  
416  
20  
1
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
A
mJ  
1800  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
1 - 7  
www.microsemi.com  
1234567

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