Datasheet > APTC60DDAM24T3G-Module

APTC60DDAM24T3G-Module

更新时间： 2024-11-25 14:55:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	360K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTC60DDAM24T3G

V_DSS= 600V

Dual boost chopper

Super Junction MOSFET

Power Module

R_DSon= 24m max @ Tj = 25°C

I_D= 95A @ Tc = 25°C

Application

AC and DC motor control

13 14



Switched Mode Power Supplies

Power Factor Correction

CR1

CR2

Features



Super junction MOSFET

Ultra low R_DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged



Kelvin source for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Each leg can be easily paralleled to achieve a single

Boost of twice the current capability

RoHS Compliant



All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per super junction MOSFET)

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Voltage

600

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

260

±20

m

P_D

Power Dissipation

T_c= 25°C

462

I_AR

E_AR

E_AS

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1900

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 8

www.microsemi.com

12 3 4 5 6 7 8

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