是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-XUFM-X10 | 针数: | 12 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 1900 mJ | 外壳连接: | ISOLATED |
配置: | COMPLEX | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 49 A | 最大漏极电流 (ID): | 49 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XUFM-X10 | 元件数量: | 2 |
端子数量: | 10 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 130 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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