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APTC60DHM45T1G PDF预览

APTC60DHM45T1G

更新时间: 2024-11-24 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 252K
描述
Asymmetrical bridge Super Junction MOSFET Power Module

APTC60DHM45T1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X10针数:12
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):1900 mJ外壳连接:ISOLATED
配置:COMPLEX最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):49 A最大漏极电流 (ID):49 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUFM-X10元件数量:2
端子数量:10工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):130 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTC60DHM45T1G 数据手册

 浏览型号APTC60DHM45T1G的Datasheet PDF文件第2页浏览型号APTC60DHM45T1G的Datasheet PDF文件第3页浏览型号APTC60DHM45T1G的Datasheet PDF文件第4页浏览型号APTC60DHM45T1G的Datasheet PDF文件第5页浏览型号APTC60DHM45T1G的Datasheet PDF文件第6页浏览型号APTC60DHM45T1G的Datasheet PDF文件第7页 
APTC60DHM45T1G  
VDSS = 600V  
RDSon = 45mΩ max @ Tj = 25°C  
ID = 49A @ Tc = 25°C  
Asymmetrical bridge  
Super Junction MOSFET  
Power Module  
Application  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Features  
-
-
-
-
-
Ultra low RDSon  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
Very low stray inductance  
Symmetrical design  
-
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Pins 3/4 must be shorted together  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
600  
49  
38  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
130  
±20  
45  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
250  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
15  
3
1900  
A
mJ  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 7  
www.microsemi.com  

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