是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X25 |
针数: | 25 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.25 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1800 mJ |
外壳连接: | ISOLATED | 配置: | COMPLEX |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 39 A |
最大漏极电流 (ID): | 39 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUFM-X25 |
JESD-609代码: | e1 | 湿度敏感等级: | 1 |
元件数量: | 4 | 端子数量: | 25 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 160 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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