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APTC60HM70T3G

更新时间: 2024-11-24 04:06:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 317K
描述
Full - Bridge Super Junction MOSFET Power Module

APTC60HM70T3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X25
针数:25Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1800 mJ
外壳连接:ISOLATED配置:COMPLEX
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):39 A
最大漏极电流 (ID):39 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X25
JESD-609代码:e1湿度敏感等级:1
元件数量:4端子数量:25
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTC60HM70T3G 数据手册

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APTC60HM70T3G  
Full - Bridge  
Super Junction MOSFET  
Power Module  
VDSS = 600V  
RDSon = 70mmax @ Tj = 25°C  
ID = 39A @ Tc = 25°C  
Application  
13 14  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Q1  
Q3  
18  
19  
11  
10  
Features  
22  
23  
7
8
-
-
-
-
-
Ultra low RDSon  
Q2  
Q4  
32  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
4
3
26  
27  
Kelvin source for easy drive  
Very low stray inductance  
29  
30  
31  
R1  
-
Symmetrical design  
15  
16  
Internal thermistor for temperature monitoring  
High level of integration  
28 27 26 25  
23 22  
20 19 18  
Benefits  
29  
30  
16  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
15  
31  
32  
14  
13  
Low profile  
Each leg can be easily paralleled to achieve a phase  
2
3
4
7
8
10 11  
12  
leg of twice the current capability  
RoHS Compliant  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
600  
V
Tc = 25°C  
39  
29  
160  
±20  
70  
250  
20  
1
1800  
ID  
Continuous Drain Current  
A
Tc = 80°C  
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
m  
W
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Tc = 25°C  
Avalanche current (repetitive and non repetitive)  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
www.microsemi.com  
1 - 6  

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