是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X12 | 针数: | 12 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 1900 mJ |
外壳连接: | ISOLATED | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 49 A |
最大漏极电流 (ID): | 49 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUFM-X12 |
元件数量: | 2 | 端子数量: | 12 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 250 W | 最大脉冲漏极电流 (IDM): | 130 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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