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APTC60VDAM45T1G PDF预览

APTC60VDAM45T1G

更新时间: 2024-11-27 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 251K
描述
Dual boost chopper Super Junction MOSFET Power Module

APTC60VDAM45T1G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X12针数:12
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76Is Samacsys:N
其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):1900 mJ
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):49 A
最大漏极电流 (ID):49 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X12
元件数量:2端子数量:12
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):130 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APTC60VDAM45T1G 数据手册

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APTC60VDAM45T1G  
VDSS = 600V  
RDSon = 45mΩ max @ Tj = 25°C  
ID = 49A @ Tc = 25°C  
Dual boost chopper  
Super Junction MOSFET  
Power Module  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction (PFC)  
Interleaved PFC  
Features  
-
-
-
-
-
Ultra low RDSon  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
Very low stray inductance  
Symmetrical design  
-
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Each leg can be easily paralleled to achieve a single  
boost of twice the current capability  
Low profile  
Pins 3/4 must be shorted together  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
600  
49  
38  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
130  
±20  
45  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
250  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
15  
3
1900  
A
mJ  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 7  
www.microsemi.com  

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