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APTC60DDAM70T3G PDF预览

APTC60DDAM70T3G

更新时间: 2024-11-24 04:06:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 309K
描述
Dual boost chopper Super Junction MOSFET Power Module

APTC60DDAM70T3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-X25针数:25
Reach Compliance Code:unknown风险等级:5.63
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1800 mJ外壳连接:ISOLATED
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):39 A最大漏极电流 (ID):39 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUFM-X25JESD-609代码:e1
湿度敏感等级:1元件数量:2
端子数量:25工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APTC60DDAM70T3G 数据手册

 浏览型号APTC60DDAM70T3G的Datasheet PDF文件第2页浏览型号APTC60DDAM70T3G的Datasheet PDF文件第3页浏览型号APTC60DDAM70T3G的Datasheet PDF文件第4页浏览型号APTC60DDAM70T3G的Datasheet PDF文件第5页浏览型号APTC60DDAM70T3G的Datasheet PDF文件第6页 
APTC60DDAM70T3G  
Dual boost chopper  
Super Junction MOSFET  
Power Module  
VDSS = 600V  
RDSon = 70mmax @ Tj = 25°C  
ID = 39A @ Tc = 25°C  
Application  
13 14  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
CR1  
CR2  
22  
23  
7
8
Features  
-
-
-
-
-
Ultra low RDSon  
Q2  
Q1  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
26  
27  
4
3
Kelvin source for easy drive  
Very low stray inductance  
29  
30  
31  
R1  
32  
15  
16  
-
Symmetrical design  
Internal thermistor for temperature monitoring  
High level of integration  
28 27 26 25  
23 22  
20 19 18  
Benefits  
29  
30  
16  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
15  
31  
32  
14  
13  
Low profile  
Each leg can be easily paralleled to achieve a single  
boost of twice the current capability  
RoHS Compliant  
2
3
4
7
8
10 11  
12  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
600  
V
Tc = 25°C  
39  
29  
ID  
Continuous Drain Current  
A
Tc = 80°C  
IDM  
VGS  
RDSon  
PD  
Pulsed Drain current  
160  
±20  
70  
Gate - Source Voltage  
V
m  
W
Drain - Source ON Resistance  
Maximum Power Dissipation  
Tc = 25°C  
250  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
20  
A
Repetitive Avalanche Energy  
1
mJ  
Single Pulse Avalanche Energy  
1800  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
www.microsemi.com  
1 - 6  

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