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APT8DQ60KCTG PDF预览

APT8DQ60KCTG

更新时间: 2024-09-16 03:47:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 256K
描述
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

APT8DQ60KCTG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.4Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE, LOW NOISE应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.4 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:110 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.019 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:PURE MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

APT8DQ60KCTG 数据手册

 浏览型号APT8DQ60KCTG的Datasheet PDF文件第2页浏览型号APT8DQ60KCTG的Datasheet PDF文件第3页浏览型号APT8DQ60KCTG的Datasheet PDF文件第4页 
600V 8A  
APT8DQ60KCT  
APT8DQ60KCTG*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE  
(KCT)  
PRODUCT APPLICATIONS  
PRODUCT BENEFITS  
PRODUCT FEATURES  
• Low Losses  
• Ultrafast Recovery Times  
• Anti-Parallel Diode  
-Switchmode Power Supply  
-Inverters  
• Free Wheeling Diode  
-Motor Controllers  
-Converters  
1
• Low Noise Switching  
• Cooler Operation  
• Soft Recovery Characteristics  
• Popular TO-220 Package  
• Low Forward Voltage  
3
2
1
3
• Higher Reliability Systems  
-Inverters  
• Snubber Diode  
• Increased System Power  
Density  
• Low Leakage Current  
2
• PFC  
• Avalanche Energy Rated  
1 - Anode 1  
2 - Common Cathode  
Back of Case -Cathode  
3 - Anode 2  
MAXIMUM RATINGS  
All Ratings Per Leg: T = 25°C unless otherwise specified.  
C
APT8DQ60KCT(G)  
Symbol Characteristic / Test Conditions  
UNIT  
VR  
VRRM  
VRWM  
IF(AV)  
IF(RMS)  
IFSM  
Maximum D.C. Reverse Voltage  
Maximum Peak Repetitive Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Volts  
600  
Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5)  
8
16  
RMS Forward Current (Square wave, 50% duty)  
Amps  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)  
110  
EAVL  
mJ  
°C  
Avalanche Energy (1A, 40mH)  
20  
TJ,TSTG  
TL  
-55 to 175  
300  
Operating and StorageTemperature Range  
Lead Temperature for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
UNIT  
MIN  
TYP  
MAX  
IF = 8A  
2.0  
2.5  
1.5  
2.4  
IF = 16A  
VF  
Forward Voltage  
Volts  
IF = 8A, TJ = 125°C  
VR = 600V  
25  
IRM  
CT  
µA  
pF  
Maximum Reverse Leakage Current  
Junction Capacitance, VR = 200V  
VR = 600V, TJ = 125°C  
500  
16  
Microsemi Website - http://www.microsemi.com  

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