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APT8M80K PDF预览

APT8M80K

更新时间: 2024-11-25 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 118K
描述
N-Channel MOSFET

APT8M80K 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.83
Is Samacsys:N其他特性:FAST SWITCHING, AVALANCHE RATED
雪崩能效等级(Eas):285 mJ外壳连接:DRAIN
配置:Single最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):45 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):225 W最大脉冲漏极电流 (IDM):25 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT8M80K 数据手册

 浏览型号APT8M80K的Datasheet PDF文件第2页浏览型号APT8M80K的Datasheet PDF文件第3页浏览型号APT8M80K的Datasheet PDF文件第4页 
APT8M80K  
800V, 8A, 1.35Ω MAX,  
N-Channel MOSFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
D
APT8M80K  
Single die MOSFET  
G
S
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
Continuous Drain Current @ TC = 25°C  
ID  
8
5
Continuous Drain Current @ TC = 133°C  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
25  
±±3  
285  
4
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
225  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
3.56  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
3.11  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
153  
±33  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 13 Seconds (1.6mm from case)  
oz  
g
3.37  
1.2  
WT  
Package Weight  
in·lbf  
N·m  
13  
Torque  
Mounting Torque ( TO-223 Package), 4-43 or M± screw  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

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