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APT8GT60KR PDF预览

APT8GT60KR

更新时间: 2024-11-24 22:20:19
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管高压局域网
页数 文件大小 规格书
4页 91K
描述
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.

APT8GT60KR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
其他特性:ULTRA FAST外壳连接:COLLECTOR
最大集电极电流 (IC):16 A集电极-发射极最大电压:600 V
配置:SINGLE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):100 ns标称接通时间 (ton):17 ns
Base Number Matches:1

APT8GT60KR 数据手册

 浏览型号APT8GT60KR的Datasheet PDF文件第2页浏览型号APT8GT60KR的Datasheet PDF文件第3页浏览型号APT8GT60KR的Datasheet PDF文件第4页 
APT8GT60KR  
600V 17A  
Thunderbolt IGBT™  
TO-220  
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.  
UsingNon-PunchThroughTechnologytheThunderboltIGBTofferssuperior  
ruggedness and ultrafast switching speed.  
G
C
E
• Low Forward Voltage Drop  
• Low Tail Current  
• High Freq. Switching to 150KHz  
• Ultra Low Leakage Current  
• RBSOA and SCSOA Rated  
C
G
• Avalanche Rated  
E
All Ratings: T = 25°C unless otherwise specified.  
MAXIMUM RATINGS  
Symbol Parameter  
C
APT8GT60KR  
UNIT  
600  
600  
15  
Collector-Emitter Voltage  
VCES  
VCGR  
VEC  
VGE  
IC1  
Collector-Gate Voltage (RGE = 20K)  
Emitter-Collector Voltage  
Volts  
Y
Gate-Emitter Voltage  
±20  
Continuous Collector Current @ TC = 25°C  
17  
IC2  
Continuous Collector Current @ TC = 110°C  
8
Amps  
1
34  
ICM1  
ICM2  
EAS  
PD  
Pulsed Collector Current  
Pulsed Collector Current  
@ TC = 25°C  
1
16  
@ TC = 110°C  
2
9
70  
Single Pulse Avalanche Energy  
Total Power Dissipation  
mJ  
Watts  
TJ,TSTG Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
°C  
TL  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
-15  
3
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA, Tj = -55°C)  
PRELIMINAR  
RBVCES Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)  
4
5
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 200µA, Tj = 25°C)  
Volts  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)  
VCE(ON)  
1.6  
2.0  
2.3  
2.5  
2.8  
20  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
ICES  
µA  
700  
±100  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)  
IGES  
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)  
nA  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  

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