5秒后页面跳转
APT8M100B_09 PDF预览

APT8M100B_09

更新时间: 2024-11-06 12:50:07
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 122K
描述
N-Channel MOSFET

APT8M100B_09 数据手册

 浏览型号APT8M100B_09的Datasheet PDF文件第2页浏览型号APT8M100B_09的Datasheet PDF文件第3页浏览型号APT8M100B_09的Datasheet PDF文件第4页 
APT8M100B  
APT8M100S  
1000V, 8A, 1.80Ω Max  
N-Channel MOSFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
D3PAK  
APT8M100B  
APT8M100S  
G
D
S
Single die MOSFET  
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
Continuous Drain Current @ TC = 25°C  
ID  
8
5
Continuous Drain Current @ TC = 133°C  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
27  
±±3  
415  
4
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
293  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
3.4±  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
3.15  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
153  
±33  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 13 Seconds (1.6mm from case)  
oz  
g
3.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
13  
Torque  
Mounting Torque ( TO-247 Package), 6-±2 or M± screw  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

与APT8M100B_09相关器件

型号 品牌 获取价格 描述 数据表
APT8M100S MICROSEMI

获取价格

N-Channel MOSFET
APT8M80K MICROSEMI

获取价格

N-Channel MOSFET
APT90-101DN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | CHIP
APT901R1AN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 9.5A I(D) | TO-3
APT901R1BN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10.5A I(D) | TO-247AD
APT901R1DN ADPOW

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
APT901R1HN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 9.5A I(D) | TO-258ISO
APT901R2AN ADPOW

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
APT901R2BN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247AD
APT901R3AN ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8.5A I(D) | TO-3