Datasheet > 晶体管 > IGBT> APT30GP60BSC

APT30GP60BSC

更新时间： 2024-11-27 13:05:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
9页	214K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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技术参数
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APT30GP60BSC 技术参数

生命周期：	Obsolete	零件包装代码：	TO-247AD
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	100 A
集电极-发射极最大电压：	600 V	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	463 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
Base Number Matches：	1

APT30GP60BSC 数据手册

APT30GP60B2DL(G)

APT30GP60LDL(G)

600V, 30A, V

= 2.2V Typical

CE(ON)

Resonant Mode Combi IGBT^®

The POWER MOS 7^®IGBT used in this resonant mode combi is a new generation of high

voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

frequency, high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

Features

Typical Applications

•

Low Conduction Loss

•

Induction Heating

Welding

•

SSOA Rated

Low Gate Charge

RoHS Compliant

Ultrafast Tail Current shutoff

Low forward Diode Voltage (V_F)

Ultrasoft Recovery Diode

Medical

High Power Telecom

Resonant Mode Phase Shifted

Bridge

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

UNIT

Symbol

Ratings

Collector-Emitter Voltage

Gate-Emitter Voltage

600

V_CES

Volts

±20

V_GE

±30

100

Gate-Emitter Voltage Transient

V_GEM

I_C1

I_C2

I_CM

Continuous Collector Current @ T_C= 25°C

Amps

Continuous Collector Current @ T_C= 110°C

120

Pulsed Collector Current

@ T_C= 25°C

SSOA

P_D

Switching Safe Operating Area @ T_J= 150°C

Total Power Dissipation

120A @ 600V

Watts

463

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

-55 to 150

T_J,T_STG

T_L

°C

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

600

TYP

MAX

UNIT

BV_CES

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 1.0mA)

V_GE(TH)

4.5

2.2

2.1

Gate Threshold Voltage (V_CE= V_GE, I_C= 1mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 30A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 30A, T_j= 125°C)

Volts

2.7

V_CE(ON)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C)

275

2750

±100

I_CES

I_GES

μA

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

中文翻译

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与APT30GP60BSC相关器件

型号	品牌	获取价格	描述	数据表
APT30GP60JD1	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES
APT30GP60JDQ1	ADPOW	获取价格	POWER MOS 7 IGBT
APT30GP60JDQ1G	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES
APT30GP60LDL	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT30GP60LDLG	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT30GS60BRDL	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT30GS60BRDLG	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT30GS60BRDQ2	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT30GS60BRDQ2G	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT30GS60KR	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT

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