是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.12 |
其他特性: | LOW CONDUCTION LOSS | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 64 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 345 ns | 标称接通时间 (ton): | 32 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT30GT60BRDLG | MICROSEMI |
获取价格 |
Resonant Mode Combi IGBT | |
APT30GT60BRDQ2 | ADPOW |
获取价格 |
Thunderbolt IGBT | |
APT30GT60BRDQ2G | ADPOW |
获取价格 |
Thunderbolt IGBT | |
APT30GT60BRDQ2G | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules | |
APT30GT60BRG | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules | |
APT30GT60BRG | ADPOW |
获取价格 |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. | |
APT30GT60CR | ADPOW |
获取价格 |
The Thunderbolt IGBT⑩ is a new generation of | |
APT30GT60KR | ADPOW |
获取价格 |
The Thunderbolt IGBT⑩ is a new generation of | |
APT30GT60KRG | ADPOW |
获取价格 |
Insulated Gate Bipolar Transistor, 64A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMP | |
APT30M17JFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET |