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APT30GT60BRDL PDF预览

APT30GT60BRDL

更新时间: 2024-11-27 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
9页 193K
描述
Resonant Mode Combi IGBT

APT30GT60BRDL 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.12
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):64 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):345 ns标称接通时间 (ton):32 ns
Base Number Matches:1

APT30GT60BRDL 数据手册

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600V
APT30GT60BRDL(G)  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Resonant Mode Combi IGBT®  
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high  
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers  
2
superior ruggedness and ultrafast switching speed.  
Typical Applications  
Features  
Induction Heating  
Welding  
SSOA Rated  
Low Conduction Loss  
G
C
E
RoHS Compliant  
Low Gate Charge  
Medical  
Ultrafast Tail Current shutoff  
Low forward Diode Voltage (VF)  
Ultrasoft Recovery Diode  
C
E
High Power Telecom  
Resonant Mode Phase Shifted  
Bridge  
G
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
APT30GT60BRDL(G)  
UNIT  
VCES  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
Volts  
VGE  
IC1  
30  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 110°C  
64  
IC2  
30  
Amps  
1
Pulsed Collector Current  
ICM  
110  
Switching Safe Operating Area @ TJ = 150°C  
Total Power Dissipation  
110A @ 600V  
SSOA  
PD  
250  
Watts  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
-55 to 150  
°C  
TL  
300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
3
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)  
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)  
4
5
Volts  
1.6  
2.0  
2.8  
2.5  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
50  
ICES  
IGES  
µA  
nA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
1250  
100  
Gate-Emitter Leakage Current (VGE = 20V)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  

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