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APT30GT60BRG

更新时间： 2024-11-29 12:33:35

品牌	Logo	应用领域
ADPOW		晶体晶体管功率控制双极性晶体管高压局域网
页数	文件大小	规格书
6页	227K
描述
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.

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数据手册

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APT30GT60BRG 数据手册

•ꢀLowꢀForwardꢀVoltageꢀDropꢀ

•ꢀLowꢀTailꢀCurrentꢀ

•ꢀHighꢀFreq.ꢀSwitchingꢀtoꢀ100KHz

•ꢀUltraꢀLowꢀLeakageꢀCurrent

TYPICAL PERFORMANCE CURVES

APT30GT60BR(G)

600V

APT30GT60BR

APT30GT60BRG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Thunderbolt IGBT^®

TheThunderblot IGBT^®is a new generation of high voltage power IGBTs.Using Non- Punch

Through Technology, the Thunderblot IGBT^®offers superior ruggedness and ultrafast

switching speed.

•ꢀRBSOAꢀandꢀSCSOAꢀRated

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

UNIT

APT30GT60BR(G)

V_CES

V_GE

I_C1

Collector-Emitter Voltage

600

Volts

Gate-Emitter Voltage

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

I_C2

Amps

Pulsed Collector Current

I_CM

110

Switching Safe Operating Area @ T_J= 150°C

110A @ 600V

250

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 150

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

Units

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 250µA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 700µA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 30A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 30A, T_j= 125°C)

600

Volts

1.6

2.0

2.8

2.5

V_CE(ON)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C)

I_CES

I_GES

µA

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C)

1000

100

Gate-Emitter Leakage Current (V_GE= 20V)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5 6

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