Datasheet > APT26F120B2_09

APT26F120B2_09

更新时间： 2024-11-13 08:33:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	118K
描述
N-Channel FREDFET

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中文翻译

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数据手册

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APT26F120B2_09 数据手册

APT26F120B2

APT26F120L

1200V, 27A, 0.58Ω Max, t ≤335ns

N-Channel FREDFET

Power MOS 8^™is a high speed, high voltage N-channel switch-mode power MOSFET.

T-Max^®

TO-264

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C /C result in excellent noise immunity and low switching loss. The

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APT26F120B2

APT26F120L

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Single die FREDFET

FEATURES

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Fast switching with low EMI

• Half bridge

• Low t for high reliability

• PFC and other boost converter

• Buck converter

• Ultra low C

for improved noise immunity

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• Low gate charge

• Single and two switch forward

• Flyback

• Avalanche energy rated

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Unit

Ratings

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Pulsed Drain Current ¹

I_DM

V_GS

E_AS

I_AR

105

±±0

2165

Gate-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

11±5

0.11

Unit

P_D

Total Power Dissipation @ T_C= 25°C

R_θJC

Junction to Case Thermal Resistance

°C/W

°C

R_θCS

0.11

Case to Sink Thermal Resistance, Flat, Greased Surface

T_J,T_STG

-55

150

±00

Operating and Storage Junction Temperature Range

T_L

Soldering Temperature for 10 Seconds (1.6mm from case)

0.22

6.2

W_T

Package Weight

in·lbf

N·m

Torque

Mounting Torque ( TO-264 Package), 4-40 or M± screw

1.1

Microsemi Website - http://www.microsemi.com

12 3 4

中文翻译

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与APT26F120B2_09相关器件

型号	品牌	获取价格	描述	数据表
APT26F120L	MICROSEMI	获取价格	N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr
APT26GU30B	ADPOW	获取价格	POWER MOS 7 IGBT
APT26GU30K	ADPOW	获取价格	POWER MOS 7 IGBT
APT26GU30K	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
APT26GU30KG	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
APT26GU30SA	ADPOW	获取价格	POWER MOS 7 IGBT
APT26GU30SA	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, D
APT26GU30SAG	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, D
APT26M100JCU2	MICROSEMI	获取价格	ISOTOP? Boost chopper MOSFET + SiC chopper diode Power module
APT26M100JCU2-Module	MICROCHIP	获取价格	MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery

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