5秒后页面跳转
APT26GU30KG PDF预览

APT26GU30KG

更新时间: 2024-11-14 03:45:59
品牌 Logo 应用领域
美高森美 - MICROSEMI
页数 文件大小 规格书
6页 172K
描述
Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

APT26GU30KG 数据手册

 浏览型号APT26GU30KG的Datasheet PDF文件第2页浏览型号APT26GU30KG的Datasheet PDF文件第3页浏览型号APT26GU30KG的Datasheet PDF文件第4页浏览型号APT26GU30KG的Datasheet PDF文件第5页浏览型号APT26GU30KG的Datasheet PDF文件第6页 
APT26GU30K  
APT26GU30SA  
300V  
®
TO-220  
POWER MOS 7 IGBT  
D2PAK  
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.  
Using Punch Through Technology this IGBT is ideal for many high frequency,  
high voltage switching applications and has been optimized for high frequency  
switchmode power supplies.  
C
G
C
G
E
E
• Low Conduction Loss  
• Low Gate Charge  
• SSOA rated  
C
E
• Ultrafast Tail Current shutoff  
G
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
UNIT  
Symbol  
VCES  
VGE  
APT26GU30K_SA  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
300  
±20  
±30  
Volts  
VGEM  
IC1  
Gate-Emitter Voltage Transient  
47  
26  
85  
Continuous Collector Current @ TC = 25°C  
Amps  
IC2  
Continuous Collector Current @ TC = 100°C  
1
ICM  
Pulsed Collector Current  
@ TC = 150°C  
SSOA  
PD  
Switching Safe Operating Area @ TJ = 150°C  
85A @ 300V  
187  
Watts  
°C  
Total Power Dissipation  
TJ,TSTG  
TL  
-55 to 150  
300  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)  
300  
3
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)  
4.5  
1.5  
1.5  
6
Volts  
2.0  
VCE(ON)  
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
250  
2500  
±100  
ICES  
µA  
nA  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
IGES  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

与APT26GU30KG相关器件

型号 品牌 获取价格 描述 数据表
APT26GU30SA ADPOW

获取价格

POWER MOS 7 IGBT
APT26GU30SA MICROSEMI

获取价格

Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, D
APT26GU30SAG MICROSEMI

获取价格

Insulated Gate Bipolar Transistor, 47A I(C), 300V V(BR)CES, N-Channel, TO-263AB, TO-263, D
APT26M100JCU2 MICROSEMI

获取价格

ISOTOP? Boost chopper MOSFET + SiC chopper diode Power module
APT26M100JCU2-Module MICROCHIP

获取价格

MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery
APT26M100JCU3 MICROSEMI

获取价格

ISOTOP® Buck chopper MOSFET + SiC chopper dio
APT26M100JCU3-Module MICROCHIP

获取价格

MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery
APT27 BCDSEMI

获取价格

HIGH VOLTAGE NPN TRANSISTOR
APT27GA90BD15 MICROSEMI

获取价格

High Speed PT IGBT
APT27GA90K MICROSEMI

获取价格

High Speed PT IGBT