Datasheet > APT26M100JCU2-Module

APT26M100JCU2-Module

更新时间： 2024-11-14 14:54:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
6页	354K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

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APT26M100JCU2-Module 数据手册

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APT26M100JCU2

ISOTOP^®Boost chopper

MOSFET + SiC chopper diode

Power module

V_DSS= 1000V

_DSon= 330m typ @ Tj = 25°C

I_D= 26A @ Tc = 25°C

Application



AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features



Power MOS 8™ MOSFET

Low R_DSon

Low input and Miller capacitance

Low gate charge

Avalanche energy rated

 SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF



ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits



Outstanding performance at high frequency

operation



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

RoHS Compliant

ISOTOP^

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

140

±30

396

m

P_D

Maximum Power Dissipation

T_c= 25°C

543

I_AR

Avalanche current (repetitive and non repetitive)

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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