Datasheet > APT10SCD65K

APT10SCD65K

更新时间： 2024-02-17 01:35:16

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	700K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 17A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220, 2 PIN

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APT10SCD65K 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	R-PSFM-T2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.23	其他特性：	HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE
应用：	GENERAL PURPOSE	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON CARBIDE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.8 V
JEDEC-95代码：	TO-220AC	JESD-30 代码：	R-PSFM-T2
最大非重复峰值正向电流：	110 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	17 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大功率耗散：	63 W	最大重复峰值反向电压：	650 V
最大反向电流：	200 µA	表面贴装：	NO
技术：	SCHOTTKY	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

APT10SCD65K 数据手册

APT10SCD65K

Disclaimer:

The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND

CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used

without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with

Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modiﬁed, by

any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property

right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or

otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an ofﬁcer of Microsemi.

Microsemi reserves the right to change the conﬁguration, functionality and performance of its products at anytime without any notice. This

product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or

applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or

use of Microsemi products including liability or warranties relating to ﬁtness for a particular purpose, merchantability, or infringement of any

patent, copyright or other intellectual property right. Any performance speciﬁcations believed to be reliable but are not veriﬁed and customer or

user must conduct and complete all performance and other testing of this product as well as any user or customer's ﬁnal application. User or

customer shall not rely on any data and performance speciﬁcations or parameters provided by Microsemi. It is the customer’s and user’s re-

sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein

is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi

speciﬁcally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proﬁt. The product is

subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions.

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与APT10SCD65K相关器件

型号	品牌	描述	获取价格	数据表
APT10SCD65KCT	MICROSEMI	Rectifier Diode, Schottky, 1 Phase, 2 Element, 17A, 650V V(RRM), Silicon Carbide, TO-220AB	获取价格
APT10SCE120B	MICROSEMI	Rectifier Diode, Schottky, 1 Phase, 1 Element, 43A, 1200V V(RRM), Silicon Carbide, TO-247,	获取价格
APT10SCE170B	MICROSEMI	Rectifier Diode, Schottky, 1 Phase, 1 Element, 23A, 1700V V(RRM), Silicon Carbide, TO-247,	获取价格
APT10SCE170D	MICROSEMI	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1700V V(RRM), Silicon Carbide, DIE-1	获取价格
AP-T11	GRAYHILL	Sealed against contamination when properly mounted	获取价格
APT1101R2BFLL	ADPOW	POWER MOS 7 FREDFET	获取价格

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