AP6A100M
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
100mΩ
3.3A
D2
D2
▼ Small Package Outline
RDS(ON)
D1
D1
3
▼ Surface Mount Device
ID
G2
S2
G1
▼ RoHS Compliant & Halogen-Free
SO-8
S1
Description
D2
S2
D1
S1
AP6A100 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
G2
G1
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
60
+20
V
Gate-Source Voltage
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
3.3
A
2.7
A
20
A
PD@TA=25℃
TSTG
Total Power Dissipation
2
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201611221