Datasheet > AP6N3R8H

AP6N3R8H

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	73K
描述
TO-252

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AP6N3R8H 数据手册

AP6N3R8H

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

60V

3.8mΩ

155A

▼ Simple Drive Requirement

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP6N3R8 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and

suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

+20

Drain Current (Chip), V_GS@ 10V⁵

Drain Current, V_GS@ 10V⁵

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

155

360

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

156

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

184

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

0.8

Rthj-a

62.5

Data and specifications subject to change without notice

201510021

12 3 4 5 6

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